PART |
Description |
Maker |
SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 |
5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2,4,8时钟发生器芯片(5V/3.3V ÷ 2,4,8时钟发生芯片 LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP 5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP 5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP 5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
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Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
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PUMH20 PEMH20 PUMH20115 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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DTC115EM3T5G |
Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
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PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟 NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=2.2千欧姆,R2=47千欧
|
NXP Semiconductors N.V.
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ZXT11N15DF ZXT11N15DFTC ZXT11N15DFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN 15V NPN SILICON LOW SATURATION TRANSISTOR NPN Low Sat Transistor
|
Diodes, Inc. Diodes Incorporated Zetex Semiconductors
|
BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC846BPDW1T |
Dual General Purpose Amplifier Transistors (NPN PNP)(-45V通用型双放大器晶体管(NPN PNP,SOT-363封装)) 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR From old datasheet system Dual General Purpose Transistors(NPN/PNP Duals)
|
ON Semiconductor
|
BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
ZDT1048TA ZDT104807 ZDT1048 ZDT1048-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors SM-8 Dual NPN medium power high gain transistors
|
Diodes Incorporated Zetex Semiconductors
|
2N3903 |
NPN Silicon General Purpose Transistors(NPN通用型晶体管) 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 General Purpose Transistors(NPN Silicon)
|
Motorola Mobility Holdings, Inc. ON Semiconductor
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2SC1413 2N6371HV 2N6371 2SC1413A 2SC1454 2N3055 2N |
TO-3 Power Package Transistors (NPN) 3功率封装晶体管(NPN)的 TO-3 Power Package Transistors (NPN) 功率封装晶体管(NPN)的
|
ETC[ETC] Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers Unknow
|
M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 |
EE PLD, 10 ns, PBGA352 BGA-352 EE PLD, 12 ns, PBGA352 BGA-352 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160 EE PLD, 15 ns, PBGA352 BGA-352 Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144 EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160 CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100 EE PLD, 15 ns, PQFP100 TQFP-100 Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208 EE PLD, 12 ns, PQFP100 TQFP-100 EE PLD, 12 ns, PBGA256 BGA-256
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Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
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